j cs , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SA1908 description ? collector-emitter breakdown voltage- v silicon pnp power transistor 2SA1908 electrical characteristics tc-25"c unless otherwise specified symbol v(br)ceo vce(sat) icbo iebo hfe cob fi parameter collector-emitter breakdown voltage collector-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain collector output capacitance current-gain ? bandwidth product conditions lc= -50ma; ib= 0 lc= -3a; ib= -0.3a vcb=-120v;ie=0 veb= -6v; lc= 0 lc= -3a; vce= -4v le=0;vcb=-10v;f=1mhz ie=0.5a;vce=-12v min -120 50 typ. 300 20 max -0.5 -10 -10 unit v v ua ua pf mhz switching times ton tstg tf turn-on time storage time fall time lc=-4a, rl=10fi, ib1= -lb2= -0.4a, vcc= -40v 0.14 1.40 0.21 u s u s u s classifications o 50-100 p 70-140 y 90-180
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